High-Resolution Thermal Profiling of a High-Power Diode Laser Facet During Aging

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2023-10-19 DOI:10.1109/JQE.2023.3325256

Luyang Wang;Aman Kumar Jha;Salmaan H. Baxamusa;Jack Kotovsky;Robert J. Deri;Rebecca B. Swertfeger;Prabhu Thiagarajan;Mark T. Crowley;Gerald Thaler;Jiyon Song;Kevin P. Pipe

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Abstract

We study the facet temperature distribution of a high-power diode laser over its lifetime using a noncontact, high spatial resolution CCD-based thermoreflectance technique. Based on the known correlation between non-radiative defects and heating, thermal maps can provide valuable information regarding the formation and evolution of small point defects that are at or near the facet during aging. In the laser under study in this work we measure the appearance of local hot spots on the facet, including concentrated hot spots that appear just before or just after COD and are correlated with loss of local light emission. The locations of these hot spots do not exhibit morphology changes in high-resolution SEM imaging of the facet, indicating that the related defects are too small to be observable in SEM or are located at some depth under the facet. Prior to COD, we measure a gradual facet temperature increase accompanied by a gradual optical power decrease and gradual facet optical absorption increase, indicating gradual degradation of the laser.

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高功率二极管激光表面老化过程的高分辨率热分析

我们使用非接触式、高空间分辨率的基于ccd的热反射技术研究了高功率二极管激光器在其寿命期间的表面温度分布。基于已知的非辐射缺陷和加热之间的相关性，热图可以提供有关老化过程中小点缺陷的形成和演变的有价值的信息。在本工作所研究的激光器中，我们测量了表面上局部热点的出现，包括在COD之前或之后出现的集中热点，这些热点与局部光发射损失相关。这些热点的位置在facet的高分辨率SEM成像中没有表现出形态学变化，这表明相关缺陷太小而无法在SEM中观察到，或者位于facet下方的某个深度。在COD之前，我们测量到一个逐渐升高的表面温度，伴随着逐渐下降的光功率和逐渐增加的表面光吸收，表明激光逐渐退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.

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