Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Omar Barrera;Sinwoo Cho;Lezli Matto;Jack Kramer;Kenny Huynh;Vakhtang Chulukhadze;Yen-Wei Chang;Mark S. Goorsky;Ruochen Lu
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引用次数: 6

Abstract

This work reports an acoustic filter at 23.5 GHz with a low insertion loss (IL) of 2.38 dB and a 3-dB fractional bandwidth (FBW) of 18.2%, significantly surpassing the state-of-the-art. The device leverages electrically coupled acoustic resonators in 100 nm 128° Y-cut lithium niobate (LiNbO3) piezoelectric thin film, operating in the first-order antisymmetric (A1) mode. A new film stack, namely transferred thin-film LiNbO3 on silicon (Si) substrate with an intermediate amorphous silicon (a-Si) layer, facilitates the record-breaking performance at millimeter-wave (mmWave). The filter features a compact footprint of 0.56 mm2. In this letter, acoustic and EM consideration, along with material characterization with X-ray diffraction and verified with cross-sectional electron microscopy are reported. Upon further development, the reported filter platform can enable various front-end signal-processing functions at mmWave. [2023-0129]
23.5 GHz铌酸锂薄膜声滤波器,IL为2.38 dB, FBW为18.2%
这项工作报告了23.5 GHz的声滤波器,其插入损耗(IL)低至2.38 dB, 3db分数带宽(FBW)为18.2%,大大超过了目前的水平。该器件利用100 nm 128°y型切割铌酸锂(LiNbO3)压电薄膜中的电耦合声学谐振器,以一阶反对称(A1)模式工作。一种新的薄膜堆栈,即在硅(Si)衬底上带有中间非晶硅(A -Si)层的转移薄膜LiNbO3,有助于在毫米波(mmWave)下实现破纪录的性能。该过滤器的特点是紧凑的占地面积为0.56 mm2。在这封信中,报告了声学和EM考虑,以及x射线衍射和截面电子显微镜验证的材料表征。经过进一步开发,所报道的滤波器平台可以实现毫米波的各种前端信号处理功能。(2023 - 0129)
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来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
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