Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric

Q3 Engineering
Hakkee Jung
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引用次数: 0

Abstract

An analytical SS model is presented to observe the subthreshold swing (SS) of a junctionless gate-all-around (GAA) FET with ferroelectric in this paper. For the gate structure, a multilayer structure of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) was used, and the SS was calculated in $15 \leqslant {P_r} \leqslant 30\,\mu C/c{m^2}$ and $0.8 \leqslant {E_c} \leqslant 1.5\,MV/cm$, which are the ranges of remanent polarization and coercive field suggested in various experiments in the case of HZO as the ferroelectric material. It was found that the SSs from the presented analytical SS model agree well with those derived from the relationship between drain current and gate voltage using a 2D potential distribution in the range of device parameters used for simulation. As a result of analyzing the SS of the junctionless GAA FET with ferroelectric using the analytical SS model presented in this paper, the SS decreased because the voltage across the inner gate decreased when the ferroelectric thickness increased. It was observed that the condition of SS &lt; 60 mV/dec was sufficiently obtained according to changes in device parameters such as channel length, channel radius and ferroelectric thickness, and that the SS maintained a constant value according to the ratio of remanent polarization and coercive field Pr/Ec. As Pr/Ec increases, the SS increases as the ferroelectric capacitance increases. As the channel length becomes smaller, the change in SS according to Pr/Ec is more severe.

铁电无结栅极全能场效应管(GAA)亚阈值摆动分析模型
本文提出了一种用于观察铁电无结栅极全畴场效应管(GAA)亚阈值摆幅(SS)的解析SS模型。栅极结构采用金属-铁电-金属-绝缘体-半导体(MFMIS)多层结构,SS计算公式为$15 \leqslant {P_r} \leqslant 30\,\mu C/c{m^2}$和$0.8 \leqslant {E_c} \leqslant 1.5\,MV/cm$,即以HZO为铁电材料时各种实验提出的剩余极化和矫顽力场范围。结果表明,在模拟器件参数范围内,利用二维电势分布得到的漏极电流和栅极电压之间的关系与本文所提出的解析式SS模型的SS值吻合得很好。利用本文提出的解析SS模型对无结GAA铁电场效应管的SS进行了分析,结果表明,随着铁电厚度的增加,内栅极上的电压减小,SS减小。观察到SS &lt;根据沟道长度、沟道半径、铁电厚度等器件参数的变化,充分得到60 mV/dec,并根据剩余极化与矫顽力场&lt;italic&gt; &lt;/italic&gt;&lt;sub&gt;&lt;;italic&gt; &lt;/italic&gt;&lt;/sub&gt;/&lt;italic&gt;E&lt;/italic&gt;&lt;;italic&gt;c&lt;/italic&gt;;&lt;/italic&gt;&lt;sub&gt;&lt; &lt;/italic&gt;&lt;/sub&gt; &lt;/italic&gt;&lt;/ italic&gt;&lt;增大时,SS随铁电容量增大而增大。随着通道长度的减小,SS的变化根据&lt;italic&gt;P&lt;/italic&gt;&lt;sub&gt;&lt; /italic&gt;&lt;/sub&gt;/ italic&gt;&lt;/ italic&gt;&lt;/ italic&gt;&lt;更严重。&lt;/p&gt;&lt;/abstract&gt;
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
AIMS Electronics and Electrical Engineering
AIMS Electronics and Electrical Engineering Engineering-Control and Systems Engineering
CiteScore
2.40
自引率
0.00%
发文量
19
审稿时长
8 weeks
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