High frequency high power MOSFET development

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Pub Date : 2002-06-30 DOI:10.1109/MODSYM.2002.1189449

G. Krausse

引用次数: 2

Abstract

This paper discusses in detail the development of a new class of power MOSFETs designed from the silicon die and the substrate to the heat sink with the goals of nanosecond switching and VHF operation at power levels in the kilowatts. There are three aspects to this development. First is the semiconductor die. Second is the packaging. Third are the heat sink and the package interface. All of these are addressed.

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高频大功率MOSFET的开发

本文详细讨论了新型功率mosfet的发展，从硅晶片、衬底到散热片，其设计目标是在纳秒级开关和千瓦级功率下的甚高频工作。这一发展有三个方面。首先是半导体芯片。其次是包装。第三是散热器和封装接口。所有这些问题都得到了解决。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.

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