AIN/AlxGa1-xN Resonance-Tunnel Diodes

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW) Pub Date : 2007-06-25 DOI:10.1109/MSMW.2007.4294759

O. Botsula, E. Prokhorov, A. Suzdaltsev, A. V. Djadchenko

引用次数: 0

Abstract

This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.

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AIN/AlxGa1-xN谐振隧道二极管

本研究探讨了在共振隧道二极管(RTD)中使用氮化合物的可能性。给出了以AlxGa1-xN量子阱和AlN为势垒层的RTD的I-V特性和透射系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW)

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