Current Issues in the Bulk Growth of S.i. III-V Materials

Abstract

The present status of crystal growth technology for preparing s.i. GaAs and InP is briefly reviewed considering LEC-techniques and improved versions as wen as Vertical Bridgman techniques. In the second part the post growth thermal treatment of crystals and wafers is discussed. Ingot and wafer annealing are commonly used procedures to improve the material properties of s.i. GaAs. Wafer annealing has only recently gained attraction for 10 since the preparation of nominally undoped s.i. InP has been demonstrated by our group. Finally the potential of new developments in the processing of s.i. III-V bulk growth will be discussed.