Zone inversion in the Bi/sub 2/Se/sub 3/ rich side of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ solid solution

H. Ha, D. Hyun, B. Yoo, N. V. Kolomoets, J. Shim
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Abstract

Solid solutions of Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ pseudo-binary system were mechanically alloyed, cold pressed and then sintered at different temperatures between 250/spl deg/C and 380/spl deg/C. By sintering specimens for several hours in evacuated ampoules, the equilibrium thermoelectric properties were obtained. Significant differences in thermoelectric properties were found between the sintered materials and the single crystals grown by the conventional solidification processes. Besides the well known composition of Bi/sub 2/Te/sub 2/Se, singular properties were found at the composition of Bi/sub 2/TeSe/sub 2/. In the Bi/sub 2/Se/sub 3/ rich region, the thermal conductivity at room temperature showed unusual behaviour. The most plausible explanation for such phenomena appeared to be the inversion of conduction and valence zones. Detailed examination of the temperature dependence of the electrical conductivity confirmed this explanation.
在Bi/sub - 2/Te/sub - 3/-Bi/sub - 2/Se/sub - 3/固溶体富侧的Bi/sub - 2/Se/sub - 3带反转
将Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/伪二元体系的固溶体进行机械合金化、冷压,然后在250 ~ 380℃的不同温度下进行烧结。通过在真空安瓿中烧结数小时,获得了平衡热电性能。发现烧结材料的热电性能与常规凝固工艺生长的单晶有显著差异。除了已知的Bi/sub - 2/Te/sub - 2/Se组合外,还发现了Bi/sub - 2/TeSe/sub - 2/组合的奇异性质。在Bi/sub - 2/Se/sub - 3/富区,室温热导率表现出不同寻常的行为。对这种现象最合理的解释似乎是传导带和价带的反转。电导率对温度依赖性的详细研究证实了这一解释。
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