X-Band receiver front-end in fully depleted SOI technology

Abstract

This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20-21.5 dB conversion gain, 5.6-6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.