{"title":"A 2–5 Gb/s fully differential 3X oversampling CDR for high-speed serial data link","authors":"Nathan Kiddinapillai, T. Kwasniewski","doi":"10.1109/NORCHP.2009.5397815","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of a fully differential 3X oversampling clock and data recovery (CDR) circuit for high-speed serial data link. The CDR is capable of operating at any speed from 2 to 5 Gb/s. The architecture of the CDR replaces the analog VCO and loop filter used in analog PLL based CDR with digital circuits. The CDR uses a digital threshold decision technique to improve the jitter tolerance performance. System level simulation shows that the CDR has a high frequency jitter tolerance of 0.67 UI and acquisition time of 8 baud period. The CDR is implemented in 65 nm CMOS process technology. The post-layout simulation is performed for 27–1 PRBS data. The CDR consumes 39 mW from 1.1 V power supply at 5 Gb/s. The core CDR circuit occupies an area of 0.013mm2.","PeriodicalId":308859,"journal":{"name":"2009 NORCHIP","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2009.5397815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents the design and implementation of a fully differential 3X oversampling clock and data recovery (CDR) circuit for high-speed serial data link. The CDR is capable of operating at any speed from 2 to 5 Gb/s. The architecture of the CDR replaces the analog VCO and loop filter used in analog PLL based CDR with digital circuits. The CDR uses a digital threshold decision technique to improve the jitter tolerance performance. System level simulation shows that the CDR has a high frequency jitter tolerance of 0.67 UI and acquisition time of 8 baud period. The CDR is implemented in 65 nm CMOS process technology. The post-layout simulation is performed for 27–1 PRBS data. The CDR consumes 39 mW from 1.1 V power supply at 5 Gb/s. The core CDR circuit occupies an area of 0.013mm2.