Kazuya Konishi, Tetsuya Nitta, T. Tamaki, S. Soneda
{"title":"Separate-Bottom Player CSTBT™ for Approaching Turn-off Switching Loss Reduction Limit","authors":"Kazuya Konishi, Tetsuya Nitta, T. Tamaki, S. Soneda","doi":"10.1109/ISPSD57135.2023.10147447","DOIUrl":null,"url":null,"abstract":"The dynamic avalanche restricts the turn-off switching speed and limits <tex>$E_{\\text{off}}$</tex> reduction. In this paper, we propose a new separate-bottom Player CSTBT™ and demonstrate its impact on <tex>$E_{\\text{off}}$</tex> reduction by TCAD simulations. This structure relaxes the electric field at trench bottom and enables faster <tex>$\\mathrm{d}I/\\mathrm{d}t$</tex> and <tex>$\\mathrm{d}V/\\mathrm{d}t$</tex>. Therefore, our proposed structure successfully reduces the <tex>$E_{\\text{off}}$</tex> by 20% at the same condition of <tex>$V_{\\text{CE}(\\text{sat})}$</tex> as the conventional structure, approaching the <tex>$E_{\\text{off}}$</tex> limit.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The dynamic avalanche restricts the turn-off switching speed and limits $E_{\text{off}}$ reduction. In this paper, we propose a new separate-bottom Player CSTBT™ and demonstrate its impact on $E_{\text{off}}$ reduction by TCAD simulations. This structure relaxes the electric field at trench bottom and enables faster $\mathrm{d}I/\mathrm{d}t$ and $\mathrm{d}V/\mathrm{d}t$. Therefore, our proposed structure successfully reduces the $E_{\text{off}}$ by 20% at the same condition of $V_{\text{CE}(\text{sat})}$ as the conventional structure, approaching the $E_{\text{off}}$ limit.