CD controllability of chemically amplified resists for x-ray membrane mask fabrication

M. Ezaki, Y. Kikuchi, S. Tsuboi, H. Watanabe, H. Aoyama, Y. Nakayama, S. Ohki, T. Morosawa, T. Matsuda
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Abstract

E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.
x射线膜掩膜制备用化学放大抗蚀剂的CD可控性
电子束掩模刻录机是制作x射线掩模的重要工具。对于1X掩模,电子束写入工艺要求具有足够的放置精度和CD可控性。开发了一种可变形状的100 kV电子束掩模编写器EB-X3,用于x射线膜掩模的制作,并通过使用市售的正色调抗蚀剂进行了评估。我们已经证明,使用稳定的100 kV EB写入器可以获得50 nm L/S的高分辨率ZEP-520电阻。在本研究中,我们重点研究了用于x射线膜掩膜制备的化学放大(CA)抗蚀剂。
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