Design of high-speed gates based on heterostructural technology

Abstract

The design technique of digital integrated circuits on BFL gates is represented on the basis of an AlGaAs/GaAs heterostructure. The high electron mobility transistor (HEMT) is simulated and the basic architecture and electrophysical parameters of the heterostructure are defined. Experimental samples of the HEMT (with gate length 0.8 /spl mu/m) on AlGaAs/GaAs heterostructures, manufactured by MBE, are in good agreement with the simulated transistor and the discrepancy does not exceed 10%.