Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography

Abstract

Since 2019, the extreme ultraviolet lithography (EUVL) has been applied to the high-volume production of devices. For further scaling, high-numerical aperture (NA) tool and resist materials applicable to high-NA EUVL are required. However, there are no resists applicable to high-NA EUVL. These days, resist materials containing Sn whose EUV absorption cross section is particularly high are attracting much attention. In this research, radiation-induced reaction mechanisms of Sncomplex- side-chain polymers were investigated to obtain the guidelines of material design.