V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva
{"title":"Porous silicon based heterostructures: formation, properties, and application","authors":"V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva","doi":"10.1109/SMICND.1996.557349","DOIUrl":null,"url":null,"abstract":"The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.