Porous silicon based heterostructures: formation, properties, and application

V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva
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Abstract

The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.
多孔硅基异质结构:形成、性质及应用
多孔硅(PS)完美的晶体结构、发达的表面和高活性的独特组合为创造不同的异质结构提供了真正的可能性:GaAs/PS/Si、C/PS/Si、PbS/PS/Si、PS:Er/Si、Si/SiO/sub / 2/ Si。该异质结构用于CMOS/SOI集成电路、发光和波导器件。PS在硅片上提供了光电和微电子元件的集成。
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