V-band balanced resistive mixer in 65-nm CMOS

M. Varonen, M. Kärkkäinen, K. Halonen
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引用次数: 30

Abstract

We report a wideband resistive mixer fabricated in 65-nm CMOS for 60-GHz frequency range. The local oscillator signal balancing is implemented with an on-chip spiral balun. The broadband response of the balun enables wideband local oscillator tuning range. The mixer topology is suitable for both up- and downconversion. We present the on-wafer measurement results in both of these mixing modes. In downconversion, the mixer achieved 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point. The local oscillator suppression was better than 34 dB for an LO frequency from 51 to 62 GHz. The size of the mixer including pads is 0.47 mm2.
65纳米CMOS v波段平衡电阻混频器
我们报道了一种用65纳米CMOS制造的60 ghz频率范围的宽带电阻混频器。用片内螺旋平衡器实现本振信号平衡。平衡器的宽带响应使宽带本地振荡器调谐范围成为可能。混合器拓扑结构适用于上行和下行转换。我们给出了这两种混合模式下的片上测量结果。在下变频中,混频器实现了12.5 dB的转换损耗和+5 dBm的1 dB输入压缩点。在上变频中,测量到的转换损耗为13.5 dB, 1 dB输出压缩点为-19 dBm。本振抑制效果在51 ~ 62 GHz范围内优于34 dB。包括垫片在内的混合器尺寸为0.47 mm2。
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