Numerical analysis of integrated bipolar magnetotransistors

Abstract

The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain "rules" for the optimisation of integrated magnetic microsensors.