Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization

C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand
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引用次数: 1

Abstract

The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.
冲击电离对InAlAs/InGaAs hemt侧化效应的影响
InAlAs/lnGaAs HEMT是用于光电子集成电路(oeic)的关键电子器件,其工作波长范围为1.3和1.5 /spl mu/m。但是,与HEMT相关的侧门效应会降低OEIC的性能。侧栅电流被证明是由于撞击电离机制引起的空穴电流进入HEMT InGaAs通道并流经InAlAs缓冲层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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