The three-collector Magnetotransistor: Variable sensitivity

Abstract

The sensitivity of bipolar magnetotransistor with the base in the well has been studied. An experiment is conducted to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or a diffused well. Their respective differential collector voltages are found to differ in sign under an applied magnetic field. It is noted that acquiring an adequate understanding of the mechanism underlying the operation of the device should help one improve its magnetic-field sensitivity. A low velocity of surface recombination and an extraction of the injected electrons by a base-well p-n junction determined operating mode with a deviation of two flows of charge carriers.