Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347393

E. Crabbé, B. Meyerson, J. Stork, D. Harame

引用次数: 81

Abstract

Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.<>

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甚高频外延硅基和硅基双极晶体管的垂直轮廓优化

采用低热循环工艺制备了具有掺磷发射体和亚50 nm外延基底的双极晶体管，以探索截止频率、击穿电压和早期电压之间的权衡。Si BJT的峰值f/sub T/s为73 GHz, SiGe HBT的峰值f/sub T/s为113 GHz，其/spl beta/V/sub a/产品分别为630和48,400 V，固有基板电阻为26和7 k/spl Omega/spl square/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE International Electron Devices Meeting

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