InP-to-Si wafer heterobonding for optical MEMs

Abstract

Summary form only given. We evaluate hydrophilic and hydrophobic surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface chemistry was examined using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After bonding, the bonded interfaces were evaluated using infrared transmission imaging, bond-strength and current-voltage (I-V) measurements.