Modelling of dislocation generation in InP crystal growth

Abstract

A Haasen-Sumino model is applied to the generation of the dislocations in InP crystals grown by a modified LEC process. The thermal conditions in the crystal come from a dynamic numerical simulation of the global heat transfer in the furnace. To take into account the behaviour at temperature close to the melting point, a dislocation annihilation model is added and the dislocation density is resolved on each glide system. The computed dislocation densities are in good agreement with the measured values and this method allows a better knowledge on the dislocation multiplication and the optimisation of growth parameters in order to decrease the dislocation density in 3-in iron doped wafer.