III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface

Abstract

By realizing a high-quality epitaxial La2O3/ GaAs(111)A interface, we demonstrate GaAs CMOS devices and integrated circuits including nMOSFETs, pMOSFETs, CMOS inverters, NAND and NOR logic gates and five-stage ring oscillators for the first time. As an exercise of III-V CMOS circuits on a common substrate with a common gate dielectric, it provides a route to realize ultimate high-mobility CMOS on Si if long-time expected breakthroughs of III-V epi-growth on Si occur.