0.25 /spl mu/m low power CMOS devices and circuits from 8 inch SOI materials

Abstract

0.25 /spl mu/m SOI-CMOS ring oscillators, various circuits and SRAM from 8-inch SIMOX wafers are reported. Both active power and stand-by leakage are compared on fully integrated lots for both SOI and bulk materials. The great advantage of SOI for active power reduction is demonstrated for various circuits. Stand-by leakage paths have been systematically studied on their dependence on material, process integration and devices. Potential solutions to reduce each stand-by leakage current are discussed. From these early 8-inch SIMOX materials, encouraging results suggest that low stand-by power can be achieved by optimizations of SOI material preparation, process integration and device design.