A scalable curve-fit model of the substrate coupling resistances for IC design

V. Gurugubelli, S. Karmalkar
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引用次数: 2

Abstract

A new approach is presented for modeling the resistances of the substrate coupling network employed for noise calculations in the design of mixed-signal and RF ICs. The approach introduces intermediate resistances having progressively simpler current flow patterns than the coupling resistances. Each coupling resistance is then modeled as the product of two resistance ratios and a resistance having simple 1-D vertical or lateral flow, and each resistance ratio is approximated as a simple function of geometrical aspect ratios. Based on this approach, closed-form expressions are derived for coupling resistances associated with parallel stripe contacts on a substrate with or without a bottom contact, in terms of dimensions of the contact configuration and substrate parameters.
集成电路设计中衬底耦合电阻的可扩展曲线拟合模型
本文提出了一种新的方法来对混合信号和射频集成电路设计中用于噪声计算的衬底耦合网络的电阻进行建模。该方法引入了具有比耦合电阻更简单的电流流模式的中间电阻。然后将每个耦合阻力建模为两个阻力比和具有简单一维垂直或横向流动的阻力的乘积,并且每个阻力比近似为几何宽高比的简单函数。在此基础上,导出了基片上有或没有底触点的平行条形触点的耦合电阻的封闭表达式,包括触点结构的尺寸和基片参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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