Optimizing EBAC / EBIRCH analysis in 5 nm technology

Abstract

An intentionally overstressed fin defect was created in 5 nm technology. EBIC analysis with 0.5 kV electron beam stimulation enabled early detection of the defect during overstress experiments. EBIRCH analysis, again at 0.5 kV was able to isolate the exact spot of the fail in a multi-fin device. Additional EBIC scans at various kVs were also able to isolate the failing fin, located close to the EBIRCH spot, and provided insights on how to use Monte Carlo scattering models to predict the optimal beam energy to find defects via EBIC. This approach could be applied to fails in 5 nm or systems with delicate structures.