Effect of Post-Mold Curing of Epoxy Molding Compound on Wirebond Reliability in a MOSFET

R.T. Nayak, T. Ahmed, A. Krishna, K. Hollis
{"title":"Effect of Post-Mold Curing of Epoxy Molding Compound on Wirebond Reliability in a MOSFET","authors":"R.T. Nayak, T. Ahmed, A. Krishna, K. Hollis","doi":"10.1109/ICEPT.2007.4441432","DOIUrl":null,"url":null,"abstract":"Automotive microelectronic packages experience severe thermal stresses that occasionally cause components and electrical interconnection damage. In tins field of application high reliability is of decisive importance, especially for aluminum wire bonds with diameters of the order of 125 mum, connecting the silicon device with the output pins. Silica filled epoxy resins as encapsulation in chip packages play a major influence on reliability and functionality of microelectronic devices. The paper intends to help understand the reliability of Aluminum wirebonds inside a leaded electronic package like Power MOSFET (metal oxide silicon field effect transistor) under the influence of post-mold curing (PMC) on thermo-mechanical properties of the mold material, like glass transition temperature (Tg), coefficients of thermal expansion (CTE) and flexural moduli. Experimental validation indicates an electrical open gate in the specimen caused due to delamination of gate bond wire (SAT and SEM images) near the leadframe bonding post under power thermal cycling from -40C to 125C. Finite element modeling is used to simulate the stresses the package goes through during reliability tests. The FE model consists of the entire MOSFET package including the lead frame, over mold, chip, substrate. Al wire loops and corresponding bond pads. The simulation considering thermal mismatch predicts high in-plane shear forces at the heel of the wire bond supported by the empirical test results. Optimum values of thermo-mechanical properties having a combination of low CTE and high E value at a higher Tg (obtained by increased PMC duration), recommended to ensure reliability of wire bond. Further, results show evidence of higher variation of in-plane shear force on the wire bond with change in CTE as compared to E. Results derived from numerical simulation and experimental data is used to serve as a guideline in the selection of suitable molding compound.","PeriodicalId":325619,"journal":{"name":"2007 8th International Conference on Electronic Packaging Technology","volume":"45 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th International Conference on Electronic Packaging Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2007.4441432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Automotive microelectronic packages experience severe thermal stresses that occasionally cause components and electrical interconnection damage. In tins field of application high reliability is of decisive importance, especially for aluminum wire bonds with diameters of the order of 125 mum, connecting the silicon device with the output pins. Silica filled epoxy resins as encapsulation in chip packages play a major influence on reliability and functionality of microelectronic devices. The paper intends to help understand the reliability of Aluminum wirebonds inside a leaded electronic package like Power MOSFET (metal oxide silicon field effect transistor) under the influence of post-mold curing (PMC) on thermo-mechanical properties of the mold material, like glass transition temperature (Tg), coefficients of thermal expansion (CTE) and flexural moduli. Experimental validation indicates an electrical open gate in the specimen caused due to delamination of gate bond wire (SAT and SEM images) near the leadframe bonding post under power thermal cycling from -40C to 125C. Finite element modeling is used to simulate the stresses the package goes through during reliability tests. The FE model consists of the entire MOSFET package including the lead frame, over mold, chip, substrate. Al wire loops and corresponding bond pads. The simulation considering thermal mismatch predicts high in-plane shear forces at the heel of the wire bond supported by the empirical test results. Optimum values of thermo-mechanical properties having a combination of low CTE and high E value at a higher Tg (obtained by increased PMC duration), recommended to ensure reliability of wire bond. Further, results show evidence of higher variation of in-plane shear force on the wire bond with change in CTE as compared to E. Results derived from numerical simulation and experimental data is used to serve as a guideline in the selection of suitable molding compound.
模后固化环氧树脂对MOSFET中线键可靠性的影响
汽车微电子封装经历严重的热应力,偶尔会导致组件和电气互连损坏。在锡应用领域,高可靠性是至关重要的,特别是直径为125微米的铝线键,连接硅器件和输出引脚。二氧化硅填充环氧树脂作为芯片封装的封装对微电子器件的可靠性和功能有着重要的影响。本文旨在帮助了解在模后固化(PMC)对模具材料的热机械性能(如玻璃化转变温度(Tg)、热膨胀系数(CTE)和弯曲模量)的影响下,电源MOSFET(金属氧化物硅场效应晶体管)等含铅电子封装内铝线键的可靠性。实验验证表明,在-40℃至125℃的功率热循环下,由于引线框架键合柱附近的栅极键合线(SAT和SEM图像)分层而导致样品中的电气开闸。在可靠性试验中,采用有限元模型来模拟包装所经受的应力。FE模型由整个MOSFET封装组成,包括引线框架、上模、芯片、衬底。铝丝环及相应的焊盘。考虑热失配的模拟预测,在经验试验结果的支持下,金属丝粘结后跟处存在较大的面内剪切力。在较高的Tg(通过增加PMC持续时间获得)下,推荐具有低CTE和高E值的热机械性能的最佳值,以确保线接的可靠性。此外,结果表明,与e相比,随着CTE的变化,线键面内剪切力的变化更大。数值模拟和实验数据的结果可作为选择合适成型化合物的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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