Introducing Asymmetry in a CMOS Latch to Obtain Inherent Power-On-Reset Behavior

F. L. Cabrera, Fernando Sousa, H. Pettenghi
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引用次数: 1

Abstract

A very important characteristic of sequential circuits is the initial state of the registers. Commonly, it is not possible to guarantee the logic value of the registers after the energizing of the circuit, so their initial values are forced through a Power-On-Reset module. In this paper we propose an asymmetric alternative to the conventional CMOS latch topology, which ensures its initial stored value without the use of additional circuits. We present the theoretical considerations that determine the initial state in the conventional and new topologies. Since the geometry of the transistors used to create the asymmetry is equal to that of the conventional circuit, the same occupied area is kept. A flip-flop was fabricated in CMOS 130 nm using both topologies. The measurements over 16 different samples demonstrated the correct functionality of the new topology when compared to the conventional one.
在CMOS锁存器中引入非对称性以获得固有的上电复位行为
顺序电路的一个非常重要的特性是寄存器的初始状态。通常,在电路通电后不可能保证寄存器的逻辑值,因此它们的初始值是通过Power-On-Reset模块强制的。在本文中,我们提出了一种非对称的替代传统CMOS锁存器拓扑,它可以确保其初始存储值,而无需使用额外的电路。我们提出了确定传统拓扑和新拓扑中初始状态的理论考虑。由于用于产生不对称的晶体管的几何形状与传统电路的几何形状相同,因此占用的面积保持不变。使用这两种拓扑结构在CMOS 130 nm上制造触发器。与传统拓扑相比,对16个不同样本的测量证明了新拓扑的正确功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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