A 4×4 Tin Oxide Gas Sensor Array with On-chip Signal Pre-processing

B. Guo, A. Bermak, P. Chan, G. Yan
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Abstract

This paper presents a monolithic 4times4 tin oxide gas sensor array together with on-chip multiplexing and differential read-out circuitry. In contrast to the conventional voltage divider read-out technique, a novel differential read-out circuit (DRC) for tin oxide gas sensors is proposed. The output of the DRC is simply proportional to the difference between the voltage on the two electrodes of the sensor but not to the transistor parameters such as mobility and threshold voltage, neither to the supply voltage. A robust fabrication process focusing on the integration of the CMOS circuitry and the MEMS structures is described. The monolithic sensor array and its processing circuitry have been implemented in our in-house 5 mum process. Experimental results showed good linearity at the output of the DRC for a wide range of sensor resistance variation (over 20 MOmega). Results also show good thermal characteristic leading to only 15.5 mW power consumption for 300 degC operating temperature.
具有片上信号预处理的4×4氧化锡气体传感器阵列
本文提出了一种单片4times4氧化锡气体传感器阵列及其片上多路复用和差分读出电路。针对传统的分压器读出技术,提出了一种用于氧化锡气体传感器的差分读出电路。DRC的输出只是与传感器两个电极上的电压差成正比,而不是与晶体管参数(如迁移率和阈值电压)成正比,也不是与电源电压成正比。描述了一种专注于CMOS电路和MEMS结构集成的稳健制造工艺。单片传感器阵列及其处理电路已在我们的内部5微米工艺中实现。实验结果表明,DRC输出具有良好的线性,适用于大范围的传感器电阻变化(超过20兆欧)。结果还显示了良好的热特性,在300℃的工作温度下,功耗仅为15.5 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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