CMOS current amplifier for AFM impedance sensing on chip with ZeptoFarad resolution

D. Bianchi, M. Carminati, G. Ferrari, M. Sampietro
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引用次数: 3

Abstract

A new sensing configuration based on the direct use of the metal input pad of a dedicated CMOS amplifier as a conductive substrate electrode for nanoscale high-performance electrical measurement with a standard conductive AFM is proposed and experimentally validated. Combining the state-of-the-art performance of an integrated current preamplifier (5MHz bandwidth, 14fA/sqrt(Hz) noise at 1MHz) with pad and setup optimization, it has been possible to straightforwardly achieve 14zF total capacitive rms resolution (0.5V applied at 1MHz with 1s averaging time) that corresponds to 75pm resolution in tracking the piezo vertical movement (allowing the detection of 6nm steps of the cantilever with a SNR of ~40dB).
具有ZeptoFarad分辨率的AFM阻抗传感芯片CMOS电流放大器
提出了一种基于专用CMOS放大器的金属输入垫作为导电衬底电极的新型传感结构,并通过标准导电AFM进行了纳米级高性能电测量。结合集成电流前置放大器的最先进性能(5MHz带宽,1MHz时14fA/sqrt(Hz)噪声)与pad和设置优化,可以直接实现14zF总电容rms分辨率(0.5V, 1MHz,平均时间为1s),对应于跟踪压电垂直运动的75pm分辨率(允许以~40dB的信噪比检测悬臂的6nm步长)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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