Polarization charge and coercive field dependent performance of negative capacitance FETs

Abstract

Negative capacitance FETs (NCFETs) [1, 2] have garnered an immense interest due to the possibility of achieving sub-60mV/decade sub-threshold swing at room temperature. NCFETs employ a ferroelectric (FE) material in the gate stack (Fig. 1) and utilize the negative capacitance associated with the FE to generate a voltage step up at the gate terminal, thereby achieving steep switching. In this work, we analyze the dependence of NCFET characteristics and circuit performance on the polarization charge and coercive field of FE-based gate stack through extensive experimental characterization of FE and device-circuit simulations.