The effect of phosphate buffer solution (PBS) concentration on the ion sensitive field-effect transistor (ISFET) detection

Abstract

The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.