A Millimeter-Wave Schottky Diode Detector in 130-nm CMOS Technology

Abstract

A 182-GHz Schottky barrier diode detector has been demonstrated in 130-nm foundry CMOS using signals generated on-chip by modulating the bias current of a push-push voltage controlled oscillator as input. This work demonstrated that it is possible to build a detector operating near the top end of millimeter-wave range using digital CMOS