GRT model of RTS noise in MOSFETs

Abstract

Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current. Proposed model of two-step charge carrier quantum transitions involving secondary trap at the channel and gate oxide interface better represents observed complex switching phenomena in nanoscale devices, as is confirmed by presented experimental results.