High performance selectively oxidized VCSELs and arrays for parallel high-speed optical interconnects

F. Mederer, M. Grabherr, F. Eberhard, I. Ecker, R. Jager, J. Joos, C. Jung, M. Kicherer, R. King, P. Schnitzer, H. Unold, D. Wiedenmann, K. Ebeling
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引用次数: 19

Abstract

We introduce a new layout for high-bandwidth single-mode selectively oxidized vertical-cavity surface-emitting laser (VCSEL) arrays operating at 980 nm or 850 nm emission wavelength for substrate or epitaxial side emission. Coplanar feeding lines and polyimide passivation are used to reduce electrical parasitics in top-emitting GaAs and bottom-emitting InGaAs VCSELs. In order to enhance fundamental single-mode emission for larger devices of reduced series resistance a surface relief transverse mode filter is employed. Fabricated VCSELs are applied in various interconnect schemes.
用于并行高速光互连的高性能选择性氧化vcsel和阵列
我们介绍了一种高带宽单模选择性氧化垂直腔表面发射激光器(VCSEL)阵列的新布局,工作在980 nm或850 nm发射波长,用于衬底或外延侧发射。采用共面馈线和聚酰亚胺钝化来降低顶发射GaAs和底发射InGaAs vcsel的电寄生。为了在减小串联电阻的大型器件中增强基波单模发射,采用了表面缓释横模滤波器。制造的vcsel应用于各种互连方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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