The fast turn off advanced IGBT, a new device concept

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583648

H.P. Yee, P. Lauritzen, R. Darling, M. Wakatabe, A. Sugai, K. Horiguchi

引用次数: 11

Abstract

A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT.

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先进的IGBT快速关断，是一种全新的器件概念

提出了一种新的横向高级IGBT (A-IGBT)，其中包括一个额外的P-MOSFET，用于更快的关断。增加的P-MOSFET在关断期间去除A-IGBT基极注入的少数载流子，在不增加IGBT导通电压的情况下实现更快的关断时间。器件仿真表明，a -IGBT在关断时间上比标准IGBT提高了10倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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