ELECTROMIGRATION EFFECTS IN VLSI DUE TO VARIOUS CURRENT TYPES

Abstract

As an outcome of the advances in integrated circuit fabrication technology, Electromigration has become a major reliability conceriz in silicon VLSI circuits. This paper present an innovative testing approach that has been implemented and allows a substantial reduction in the Electromigration test times of V LSI metal thin films. The scope and the detail of Electromigration test structures and various Electromigration test signals are emphasized. The impact of the slew rate of the testing signal upon the Electromigration resis- tance of the VLSI conductor is analyzed. Embed- ded statistical analysis techniques that have been applied enable to correlate the most valuable high accelerated Electromigration lifetime tests to real li fetime Electromigration performance of thin conductors within VLSI.