{"title":"Circuit Implications of the P.S.D.-MOST Process","authors":"Ir. L. Spaanenburg","doi":"10.1109/ESSCIRC.1976.5469086","DOIUrl":null,"url":null,"abstract":"The P.S.D.-MOST process will be compared to the polysilicon-gate process. It is shown, that P.S.D. circuitry occupy slightly less area at a higher switching speed.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The P.S.D.-MOST process will be compared to the polysilicon-gate process. It is shown, that P.S.D. circuitry occupy slightly less area at a higher switching speed.