Raman Study on the Process of SI Advanced Integrated Circuits

Abstract

Precise control of fabrication processing is a key point for future integration technology of Si devices. Reliable characterization of Si wafers at each fabrication process is indispensable. Raman scattering has high-potential as a technique for noncontact and nondestructive characterization which yields valuable information on Si-based materials. Here, a patterned Si wafer for a modern electronic device is characterized by Raman microprobe to study the effect of different processes on residual stress, as well as other physical aspects