A Smart Load-Pull Method to Safely Reach Optimal Matching Impedances of Power Transistors

T. Reveyrand, T. Gasseling, D. Barataud, S. Mons, J. Nebus
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引用次数: 15

Abstract

This paper presents a new method to find optimal load impedances of power transistors with a VNA based Load-Pull measurement setup. Most of load pull setups find the optimal load impedance of a device under test (DUT) for a given available input power. If the optimal impedance must satisfy a trade off between several parameters, such as gain compression or power added efficiency, the measurement procedure may become very time consuming. Our method automatically generates a behavioral model of the DUT. Crossing-informations from this model and measurements lead us to the good impedance optimum with a limited number of iterations.
一种安全达到功率晶体管最佳匹配阻抗的智能负载-拉法
本文提出了一种基于VNA负载-拉力测量装置的功率晶体管最佳负载阻抗的新方法。对于给定的可用输入功率,大多数负载拉动设置找到被测设备(DUT)的最佳负载阻抗。如果最佳阻抗必须满足几个参数之间的权衡,如增益压缩或功率附加效率,测量过程可能会变得非常耗时。我们的方法自动生成DUT的行为模型。该模型和测量的交叉信息使我们能够在有限的迭代次数下获得良好的阻抗优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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