Device matching measurements in 28nm technology for high energy physics experiments

2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS) Pub Date : 2016-12-01 DOI:10.1109/ICECS.2016.7841120

M. Elkhayat, Stefano Mangiarotti, C. D. Berti, M. Grassi, P. Malcovati, D. Albano, A. Baschirotto

{"title":"Device matching measurements in 28nm technology for high energy physics experiments","authors":"M. Elkhayat, Stefano Mangiarotti, C. D. Berti, M. Grassi, P. Malcovati, D. Albano, A. Baschirotto","doi":"10.1109/ICECS.2016.7841120","DOIUrl":null,"url":null,"abstract":"This work lies within SCALTECH28 project, whose main purpose is to investigate the performance of the 28nm technology in terms of signal processing quality, power consumption, and radiation hardness for applications in instrumentation electronics for particle physics with respect to previous technological generations. An additional target is to experimentally evaluate radiation damage effects on single devices and on full circuits to develop rad-models for simulations. A test chip including elementary device arrays and dedicated read-out circuits has been developed and fully characterized. In particular, a capacitance to frequency converter has been integrated to measure the matching between different capacitors of a programmable array. Experimental results show that matching performance is comparable to previous technologies, making the 28nm technology eligible for analog signal processing in front-end circuits for physical experiments and related data converters. Samples have been sent to irradiation facility for high energy experiments compliance verification.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

This work lies within SCALTECH28 project, whose main purpose is to investigate the performance of the 28nm technology in terms of signal processing quality, power consumption, and radiation hardness for applications in instrumentation electronics for particle physics with respect to previous technological generations. An additional target is to experimentally evaluate radiation damage effects on single devices and on full circuits to develop rad-models for simulations. A test chip including elementary device arrays and dedicated read-out circuits has been developed and fully characterized. In particular, a capacitance to frequency converter has been integrated to measure the matching between different capacitors of a programmable array. Experimental results show that matching performance is comparable to previous technologies, making the 28nm technology eligible for analog signal processing in front-end circuits for physical experiments and related data converters. Samples have been sent to irradiation facility for high energy experiments compliance verification.

查看原文本刊更多论文

28nm高能物理实验器件匹配测量

这项工作属于SCALTECH28项目，其主要目的是研究28nm技术在信号处理质量，功耗和辐射硬度方面的性能，用于粒子物理仪器电子应用，相对于前几代技术。另一个目标是通过实验评估辐射损伤对单个设备和整个电路的影响，以开发模拟的辐射模型。研制了一种包括基本器件阵列和专用读出电路的测试芯片，并对其进行了充分的表征。特别地，集成了电容-变频器来测量可编程阵列中不同电容之间的匹配。实验结果表明，28nm技术的匹配性能与以前的技术相当，可以用于物理实验和相关数据转换器的前端电路中的模拟信号处理。样品已送往辐照设施进行高能实验符合性验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)

自引率

0.00%

发文量