Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

Abstract

We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.