Ultra Low Phase Noise Stratum-3 TCXO with High Output Power

R. Boroditsky, J. Gomez, S. San-Pedro
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引用次数: 3

Abstract

Modern wireless communication equipment, point-to-point and point-to-multipoint microwave digital radios, radar equipment, microwave sources require high stability, low power consumption, and very low phase noise frequency sources in UHF band. Existing TCXO solutions can achieve -150 dBc/Hz phase noise floor at the carrier frequency of 100 MHz. The goal of this work was to create a 500 MHz TCXO with Stratum-3 stability performance (0.28 ppm over temperature, 4.6 ppm over all conditions), which can reach -155 dBc/Hz noise floor, -120 dBc/Hz at 1 KHz offset from the carrier, while providing +7 dBm of output power. The goal was accomplished by integrating in a small SMD package high performance, low frequency, Stratum-3 digitally compensated reference TCXO, low noise off-the-shelf phase locked loop (PLL) IC, and ultra low noise 500 MHz VCXO. The key solutions for this development besides solid digitally compensated TCXO design were optimization of the PLL circuit, and design of a VCXO. The VCXO is based on a 3rd overtone 100 MHz AT-cut crystal resonator with relatively high Q, passive band-pass filter, tuned on the fifth harmonic of the 100 MHz VCXO, and a free-running L-C oscillator, which is injection locked to the above mentioned fifth harmonic of the VCXO. The resulting device performance met all the stated goals and even somewhat exceeded the phase noise expectations. The sub-harmonic suppression was better than 50 dBc
超低相位噪声,高输出功率的3层TCXO
现代无线通信设备、点对点和点对多点微波数字无线电、雷达设备、微波源都要求在UHF频段具有高稳定性、低功耗和极低相位噪声的频源。现有的TCXO解决方案可以在100 MHz的载波频率下实现-150 dBc/Hz的相位本底噪声。这项工作的目标是创建一个具有层3稳定性性能的500 MHz TCXO(温度为0.28 ppm,所有条件下为4.6 ppm),可以达到-155 dBc/Hz的本底噪声,在与载波偏移1 KHz时达到-120 dBc/Hz,同时提供+7 dBm的输出功率。通过将高性能、低频、Stratum-3数字补偿参考TCXO、低噪声现成锁相环(PLL) IC和超低噪声500 MHz VCXO集成在一个小型SMD封装中,实现了这一目标。除了固体数字补偿TCXO设计外,该开发的关键解决方案是锁相环电路的优化和VCXO的设计。VCXO基于一个具有相对高Q值的第三泛音100 MHz AT-cut晶体谐振器,无源带通滤波器,在100 MHz VCXO的五次谐波上调谐,以及一个自由运行的L-C振荡器,该振荡器注入锁定在VCXO的上述五次谐波上。最终的器件性能达到了所有的既定目标,甚至在一定程度上超过了相位噪声的预期。次谐波抑制效果优于50 dBc
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