A buffer cache architecture for smartphones with hybrid DRAM/PCM memory

Ye-Jyun Lin, Chia-Lin Yang, Hsiang-Pang Li, Cheng-Yuan Michael Wang
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引用次数: 14

Abstract

Flash memory is widely used in mobile phones to store contact information, applications files and other types of data. In an operating system, the buffer cache keeps the I/O blocks in DRAM to reduce the slow flash accesses. However, in smartphones, the benefits of buffer cache are reduced due to the bulk of synchronous writes of applications for reliability issues. In this paper, we propose a buffer cache architecture with hybrid DRAM/PCM memory, which improves the I/O performance for smartphones. We use a DRAM first-level buffer cache to provide high buffer cache performance and a PCM last-level buffer cache to reduce the impact of frequent synchronous writes. Based on the proposed hierarchical buffer cache architecture, we propose a sub-dirty-block management and background flush to reduce the impact of the PCM write limitation and the dirty block writeback overhead, respectively. The experimental results show that with the proposed mechanisms, our hierarchical buffer cache can improve the I/O response time by 20% compared to the conventional buffer cache.
一种用于混合DRAM/PCM存储器的智能手机的缓冲缓存架构
闪存在移动电话中被广泛用于存储联系人信息、应用程序文件和其他类型的数据。在操作系统中,缓冲缓存将I/O块保存在DRAM中,以减少缓慢的闪存访问。然而,在智能手机中,由于可靠性问题,由于应用程序的大量同步写入,缓冲区缓存的好处被降低了。在本文中,我们提出了一种混合DRAM/PCM存储器的缓冲缓存架构,它可以提高智能手机的I/O性能。我们使用DRAM第一级缓冲缓存来提供高缓冲缓存性能,使用PCM最后一级缓冲缓存来减少频繁同步写入的影响。基于所提出的分层缓冲缓存架构,我们提出了子脏块管理和后台刷新,分别减少了PCM写限制和脏块回写开销的影响。实验结果表明,采用所提出的机制,与传统的缓存相比,我们的分层缓存可以将I/O响应时间提高20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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