Modeling of 0.18 μm NMOSFETs for TID effect

Abstract

Based on total ionizing dose (TID) irradiation tests, transistor irradiation models for both strip-gate and edgeless structures were created. Only 5% model error was incurred in off state or subthreshold region and a lower 1% error in linear region or saturation region. Edgeless structure was demonstrated to be radiation hardened. The effectiveness of proposed models was validated by application to a reference circuit simulation.