Ultra High Power 10 kV, 50 A SiC PiN Diodes

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488010

M. Das, B. Hull, J. Richmond, B. Heath, J. Sumakeris, A. Powell

引用次数: 20

Abstract

Ultra high power 10 kV, 50 A SiC PiN diodes have been developed with a low forward voltage drop (VF) of 3.75 V and a fast reverse recovery time of 150 nsec. This is the highest reported power rating for a single SiC chip (dimensions: 8.7 mm times 8.7 mm). Furthermore, all of the historical problems with the SiC PiN diode technology such as ineffective edge termination (VBD increased to > 70% of ideal breakdown voltage), poor ohmic contacts to p-type SiC (rhoc reduced to < 10-4 Omegacm2), and forward voltage drift (DeltaVF reduced to < 0.1 V) have been solved with design, material, and process improvements which have resulted in high overall device yields. A combination of performance, reliability, and yield has the SiC PiN diode technology poised for a revolutionary impact in the world of power semiconductor devices

查看原文本刊更多论文

超高功率10kv, 50a SiC引脚二极管

超高功率10 kV, 50 A SiC引脚二极管已被开发，具有3.75 V的低正向压降(VF)和150 nsec的快速反向恢复时间。这是单颗SiC芯片(尺寸:8.7 mm × 8.7 mm)的最高额定功率。此外，SiC引脚二极管技术的所有历史问题，如无效边缘终止(VBD增加到> 70%的理想击穿电压)，p型SiC的不良欧姆接触(rhoc降低到< 10-4 Omegacm2)，以及正向电压漂移(DeltaVF降低到< 0.1 V)已经通过设计，材料和工艺改进得到解决，从而提高了整体器件的产量。性能、可靠性和良率的结合使SiC PiN二极管技术有望在功率半导体器件领域产生革命性的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

自引率

0.00%

发文量