On The Total Dose Radiation Hardness Of Floating Gate EEPROM Cells

Abstract

In this paper the total dose radiation response of single and double polysilicon floating gate EEPROM cells is compared. While the hardness of double polysilicon cells is restricted to a few kilorads, devices having only one polysilicon layer are shown to be much more radiation-hard. A model is presented, that is able to explain the different behaviour of both types of cells and guidelines are given to improve the radiation hardness of the cells.