Comparison of RF performance of vertical and lateral DMOSFET

Abstract

Despite the increasing popularity of Si MOSFETs in RF applications, detailed physical understanding has yet to be developed with regard to the relative RF performance of VDMOSFETs and LDMOSFETs. In this paper, a critical comparison is made between the performance of VDMOSFETs and LDMOSFETs developed for RF power applications. Device performance is investigated using experimental characterization and numerical simulation. It is shown that LDMOSFETs have better RF performance than VDMOS due to structural differences between the two devices.