Effect of magnetic field on the turn-on characteristics of power semiconductor devices operated in pulsed power circuit

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Pub Date : 2002-06-30 DOI:10.1109/MODSYM.2002.1189548

K. Yasuoka, Y. Matsumoto, T. Aoki, Y. Tamura, S. Ibuka, S. Ishii

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Abstract

The turn-on characteristics of power semiconductor devices are evaluated under external magnetic field for studying the effect of external magnetic field generated in a pulsed power circuit. Two pin diodes that have a basic structure of power devices are connected in parallel and driven by a pulsed voltage source. It was found the magnetic field applied perpendicular to the diode current-flow could balance the diode current with that of the other diode. The carrier-density distribution inside of the diodes was measured by using a free carrier absorption technique. The data show that the carrier distribution changes from nearly the uniform one to the one-sided one. This concentration seems to be caused by the Lorenz force with the application of external magnetic field. As a result of the carrier concentration, the on-state resistance of the diode increases with increasing the magnetic field strength.

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磁场对脉冲功率电路中工作的功率半导体器件导通特性的影响

为了研究脉冲电源电路中产生的外加磁场对功率半导体器件的影响，对外加磁场作用下功率半导体器件的导通特性进行了评价。具有功率器件基本结构的两个引脚二极管并联连接并由脉冲电压源驱动。研究发现，垂直于二极管电流方向的磁场可以使二极管电流与另一个二极管的电流保持平衡。利用自由载流子吸收技术测量了二极管内部的载流子密度分布。数据表明，载流子分布由近均匀分布转变为单侧分布。这种集中似乎是由外加磁场作用下的洛伦兹力引起的。由于载流子浓度的增加，二极管的导通电阻随磁场强度的增加而增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop.

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