Optical Properties of Multilayer Porous Silicon with Different Fabrication Conditions for Application along Telecom Band

Abstract

Multilayer porous silicon structure was fabricated to study its optical response along the telecommunication band wavelength. The structure was fabricated using electrochemical etching technique. By modulating the etching parameters., different porosity layers can be achieved which will determine the refractive index value of each layer. Reflectance study was conducted to analyze the optical response for different fabrication thickness. Also the number of layers were set consistent at 40 layers for each sample for optimization. High degree of accuracy from thickness measurements achieved when comparing results from FESEM and Ellipsometer. Thicker layer films were determined to have higher reflectance along the C-band region which is very useful for communication application. Multilayer porous silicon has been studied for multiple optical devices and applications including Bragg grating waveguide., Fabry-Perot interferometers., photonic integrated circuit and optical gas sensor.