Adjustable supply voltages and refresh cycle for process variations, temperature changes, and device degradation adaptation in 1T1C embedded DRAM

L. Tran, F. Kurdahi, A. Eltawil, A. Aljumah
{"title":"Adjustable supply voltages and refresh cycle for process variations, temperature changes, and device degradation adaptation in 1T1C embedded DRAM","authors":"L. Tran, F. Kurdahi, A. Eltawil, A. Aljumah","doi":"10.1109/IDT.2011.6123115","DOIUrl":null,"url":null,"abstract":"In the present investigation, we have devised an innovative approach to dynamically set supply voltages and refresh cycle for 1T1C embedded Dynamic Random Access Memory (eDRAM). The approach helps us to reduced power consumption. The eDRAM is usually designed to sustain the worst operating conditions, and the chip is very rarely operated under these conditions. We, thus exploit the design slack while operating under more favorable conditions to power consumptions. Simulation results indicated that the power consumption can be saved more than 10 times when the chip is normally operated, which is highly significant in the chip operation. This keeps the chip cool and operating temperature will be well under control which helps in averting device degradation and ultimate breakdown.","PeriodicalId":167786,"journal":{"name":"2011 IEEE 6th International Design and Test Workshop (IDT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 6th International Design and Test Workshop (IDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2011.6123115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In the present investigation, we have devised an innovative approach to dynamically set supply voltages and refresh cycle for 1T1C embedded Dynamic Random Access Memory (eDRAM). The approach helps us to reduced power consumption. The eDRAM is usually designed to sustain the worst operating conditions, and the chip is very rarely operated under these conditions. We, thus exploit the design slack while operating under more favorable conditions to power consumptions. Simulation results indicated that the power consumption can be saved more than 10 times when the chip is normally operated, which is highly significant in the chip operation. This keeps the chip cool and operating temperature will be well under control which helps in averting device degradation and ultimate breakdown.
可调电源电压和刷新周期的工艺变化,温度变化,并在1T1C嵌入式DRAM器件退化适应
在本研究中,我们设计了一种创新的方法来动态设置1T1C嵌入式动态随机存取存储器(eDRAM)的电源电压和刷新周期。这种方法帮助我们降低了功耗。eDRAM通常被设计为能够承受最恶劣的工作条件,而芯片很少在这些条件下工作。因此,我们在更有利的功耗条件下运行时,利用了设计松弛。仿真结果表明,在芯片正常运行时,功耗可节省10倍以上,这在芯片运行中具有重要意义。这使芯片保持凉爽,工作温度将得到很好的控制,这有助于避免设备退化和最终崩溃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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